- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 65
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
2,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Strip | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN (3x3) | Independent | Low-Side | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
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Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Richtek USA Inc. |
2,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Richtek USA Inc. |
2,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Richtek USA Inc. |
2,243
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Richtek USA Inc. |
2,243
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 1CH SYNC BUCK 8WDFN
|
- | - | 4.5 V ~ 13.2 V | -40°C ~ 125°C (TJ) | 8-WDFN (3x3) | Synchronous | Half-Bridge | N-Channel MOSFET | 15V | 25ns，12ns | 0.7V，3.2V | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
2,905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
2,905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Renesas Electronics America Inc. |
324
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-TDFN (3x3) | Independent | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
|
Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
|
- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Independent | Low-Side | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Texas Instruments |
500
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
650
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Independent | Low-Side | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A |
