- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
6,000
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3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
8,182
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8-SOIC
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Cut Tape (CT) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
8,182
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8-SOIC
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- | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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IXYS Integrated Circuits Division |
1,002
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DIFF 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Infineon Technologies |
2,998
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
3,794
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL HS 4A 8-DIP
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
3,236
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL HS 4A 8-SOIC
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Renesas Electronics America Inc. |
1,303
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HS DUAL MOSFET 8-SOIC
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
4,444
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Maxim Integrated |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Maxim Integrated |
3,119
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Maxim Integrated |
3,119
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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- | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
7,548
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 8-SOIC
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Tube | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
2,250
|
3 jours |
-
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MOQ: 250 MPQ: 1
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LMG1020YFFR BEARCAT 6-PIN WCSP
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Tape & Reel (TR) | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA，DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Independent | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 375ps，350ps | 1.8V，1.7V | 7A，5A | ||
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Texas Instruments |
2,368
|
3 jours |
-
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MOQ: 1 MPQ: 1
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LMG1020YFFR BEARCAT 6-PIN WCSP
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Cut Tape (CT) | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA，DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Independent | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 375ps，350ps | 1.8V，1.7V | 7A，5A | ||
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Texas Instruments |
2,368
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
LMG1020YFFR BEARCAT 6-PIN WCSP
|
- | - | 4.75 V ~ 5.25 V | -40°C ~ 125°C (TJ) | 6-UFBGA，DSBGA | 6-DSBGA (1.2x0.8) | Surface Mount | Independent | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 375ps，350ps | 1.8V，1.7V | 7A，5A | ||
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Infineon Technologies |
195
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Maxim Integrated |
392
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DRVR HALF BRDG HS 8-SOIC
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Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | 0.8V，2V | 3A，3A | ||
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Renesas Electronics America Inc. |
938
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE FET 24-SOIC
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295"，7.50mm Width) | 24-SOIC | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Through Hole | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA |
