- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
290
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
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Microchip Technology |
394
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8MSOP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
128
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
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Microchip Technology |
399
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 16-SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
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Microchip Technology |
100
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 4.0A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
112
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV-NON 4A 8-MSOP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
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Maxim Integrated |
36
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET COTS
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Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC LDO REG W/SD 5V 16-SOIC
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Tape & Reel (TR) | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
|
|
Microchip Technology |
81
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
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Microchip Technology |
14
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
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Microchip Technology |
63
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV-NON 4A 8-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
1
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A |
