- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
70
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
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Microchip Technology |
91
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Linear Technology/Analog Devices |
29
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH SINGLE 8-MSOP
|
Tube | - | 4.5 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | 16ns，16ns | 1.7V，2.2V | 1.5A，1.5A | |||
|
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Microchip Technology |
364
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
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Microchip Technology |
654
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
|
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Microchip Technology |
595
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
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Microchip Technology |
26
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 3A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
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Microchip Technology |
300
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
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|
Linear Technology/Analog Devices |
89
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR SYNC RECTIFIER 8-SOIC
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Tube | - | 4.5 V ~ 11 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | - | 2A，2A | |||
|
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Microchip Technology |
235
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL 8MSOP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
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Microchip Technology |
800
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3 jours |
-
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MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
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Microchip Technology |
800
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
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Microchip Technology |
900
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
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Microchip Technology |
599
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
526
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
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Microchip Technology |
497
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
452
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
185
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 3A，3A |
