- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Linear Technology/Analog Devices |
2,389
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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- | - | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns，16ns | 1.7V，2.2V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
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IC MOSF DVR 85V SGL PWM 28TSSOP
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DVR 85V SGL PWM 28TSSOP
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DVR 85V SGL PWM 28TSSOP
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- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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|
Maxim Integrated |
107
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR COTS
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Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | |||
|
|
Microchip Technology |
894
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
515
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
408
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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|
Microchip Technology |
212
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
438
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8MSOP
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
701
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
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Microchip Technology |
556
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
504
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
336
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
279
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4A，4A |
