- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER MOSFET 3A DUAL 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
2,025
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
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Microchip Technology |
2,025
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
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Microchip Technology |
211
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DFN
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
|
|
Microchip Technology |
2,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
SIC MOSFET DRIVER
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Tape & Reel (TR) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
- | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
327
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V FULL BRIDGE
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (4x4) | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
566
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
566
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154"，3.90mm Width) | 16-TSSOP | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154"，3.90mm Width) | 16-TSSOP | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16TSSOP
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-SSOP (0.154"，3.90mm Width) | 16-TSSOP | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Linear Technology/Analog Devices |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns，16ns | 1.7V，2.2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
2,389
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns，16ns | 1.7V，2.2V | 1.5A，1.5A |
