- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
Microchip Technology |
3,147
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
3,147
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,978
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,978
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
2,847
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
ON Semiconductor |
2,847
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Tape & Reel (TR) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
Cut Tape (CT) | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HI SPEED 16VQFN
|
- | - | 5 V ~ 10 V | -20°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-QFN (3x3) | Surface Mount | Independent | Half-Bridge | 4 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.3V，1.7V | 2A，2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8SOIC
|
- | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER LOW-SIDE DUAL 8WDFN
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-WDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns，8ns | 1.2V，1.8V | 5A，5A | |||
|
|
ON Semiconductor |
2,947
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW-SIDE DUAL 8WDFN
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-WDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns，8ns | 1.2V，1.8V | 5A，5A | |||
|
|
ON Semiconductor |
2,947
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LOW-SIDE DUAL 8WDFN
|
- | - | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-WDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns，8ns | 1.2V，1.8V | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A | |||
|
|
ON Semiconductor |
2,162
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1CH 10A 8DFN
|
- | - | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 4ns，4ns | - | 10A，10A |
