- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,132
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Semtech Corporation |
Enquête
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 2A LOWSIDE 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 2A,2A | ||||
Semtech Corporation |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 2A LOWSIDE 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 2A,2A | ||||
Semtech Corporation |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 2A LOWSIDE 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 2A,2A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-SOIC
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-TSSOP
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173",4.40mm Width) | 8-TSSOP | Surface Mount | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Infineon Technologies |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC DVR LOW SIDE DUAL 8-SOIC
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Tape & Reel (TR) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR LOW SIDE DUAL 8-SOIC
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Cut Tape (CT) | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DVR LOW SIDE DUAL 8-SOIC
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- | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,N-Channel MOSFET | - | 25ns,25ns | 0.8V,2.5V | 2.3A,3.3A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8UMAX
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,25ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8UMAX
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Independent | Low-Side | 2 | IGBT,SiC MOSFET | - | 40ns,25ns | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8SOIC
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,25ns | 0.8V,2.1V | 4A,4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT,SiC MOSFET | - | 40ns,25ns | 2V,4.25V | 4A,4A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,25ns | 0.8V,2.1V | 4A,4A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET GATE DVR TINY 7A 6WSON
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Tape & Reel (TR) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.3V | 3A,7A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET GATE DVR TINY 7A 6WSON
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Cut Tape (CT) | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.3V | 3A,7A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET GATE DVR TINY 7A 6WSON
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- | - | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 14ns,12ns | 0.8V,2.3V | 3A,7A | ||||
IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A |