Package / Case:
Number of Drivers:
Découvrez les produits 1,132
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27533DBVR
Texas Instruments
334
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-5
- - 10 V ~ 32 V -40°C ~ 140°C (TJ) SC-74A,SOT-753 SOT-23-5 Surface Mount Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET - 15ns,7ns 1.2V,2.2V 2.5A,5A
UCC37325P
Texas Instruments
228
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS PWR FET DRVR 8-DIP
Tube - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC27325P
Texas Instruments
222
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR DUAL HS 4A 8-DIP
Tube - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
UCC37325DGN
Texas Instruments
251
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL HS PWR FET DRVR 8-MSOP
Tube - 4.5 V ~ 15 V -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-PowerPad Surface Mount Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,15ns 1V,2V 4A,4A
ADP3631ARZ-R7
Analog Devices Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
Tape & Reel (TR) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3631ARZ-R7
Analog Devices Inc.
581
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
Cut Tape (CT) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3631ARZ-R7
Analog Devices Inc.
581
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8SOIC
- - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3631ARMZ-R7
Analog Devices Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR 2A DL HS 8MSOP
Tape & Reel (TR) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3631ARMZ-R7
Analog Devices Inc.
900
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8MSOP
Cut Tape (CT) - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3631ARMZ-R7
Analog Devices Inc.
900
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 2A DL HS 8MSOP
- - 9.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 2A,2A
ADP3625ARDZ-RL
Analog Devices Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3625ARDZ-RL
Analog Devices Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3625ARDZ-RL
Analog Devices Inc.
182
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DL HS 8SOIC
- - 4.5 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
UCC27512MDRSTEP
Texas Instruments
Enquête
-
-
MOQ: 250  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
Tape & Reel (TR) - 4.5 V ~ 18 V -55°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
UCC27512MDRSTEP
Texas Instruments
576
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
Cut Tape (CT) - 4.5 V ~ 18 V -55°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
UCC27512MDRSTEP
Texas Instruments
576
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6WSON
- - 4.5 V ~ 18 V -55°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-SON (3x3) Surface Mount Single Low-Side 1 IGBT,N-Channel MOSFET - 8ns,7ns 1V,2.4V 4A,8A
HIP4086AABZ
Renesas Electronics America Inc.
32
3 jours
-
MOQ: 1  MPQ: 1
IC DVR MOSFET N-CH 3PHASE 24SOIC
Tube - 7 V ~ 15 V -40°C ~ 150°C (TJ) 24-SOIC (0.295",7.50mm Width) 24-SOIC Surface Mount 3-Phase Half-Bridge 6 N-Channel MOSFET 95V 20ns,10ns 1V,2.5V 500mA,500mA
UC2707DW
Texas Instruments
100
3 jours
-
MOQ: 1  MPQ: 1
IC DUAL CHAN PWR DRIVER 16-SOIC
Tube - 5 V ~ 40 V -25°C ~ 85°C (TA) 16-SOIC (0.295",7.50mm Width) 16-SOIC Surface Mount Independent Low-Side 2 N-Channel MOSFET - 40ns,40ns 0.8V,2.2V 1.5A,1.5A
1EDN7512BXTSA1
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Tape & Reel (TR) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 PG-SOT23-5-1 Surface Mount Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A
1EDN7512BXTSA1
Infineon Technologies
879
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH SOT23-5
Cut Tape (CT) EiceDriver 4.5 V ~ 20 V -40°C ~ 150°C (TJ) SC-74A,SOT-753 PG-SOT23-5-1 Surface Mount Single Low-Side 1 N-Channel MOSFET - 6.5ns,4.5ns - 4A,8A