- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,132
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
2,424
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DRIVER 2CH 3.3V 6A 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 1.22V，2.08V | 6A，6A | ||
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Renesas Electronics America Inc. |
374
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DRVR 60V/2.5A HF 20-SOIC
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
680
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DVR 60V/2.5A HF 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Through Hole | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
531
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR HIGH SPEED SOT23-6
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Maxim Integrated |
1,690
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HIGH SPEED SOT23-6
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Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Maxim Integrated |
1,690
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HIGH SPEED SOT23-6
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- | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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Texas Instruments |
224
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL CH PWR DRIVER 16-SOIC
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
561
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT PWR DRVR TO-220-5
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 2A，2A | ||
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Texas Instruments |
235
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
220
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 16-DIP
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
133
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 8-DIP
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR DUAL 8-TDFN
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Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,870
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 8-TDFN
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Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,870
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 8-TDFN
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- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,520
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,520
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6-TDFN
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- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
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IC GATE DVR LOW SIDE 1CH 6WSOP
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Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns，4.5ns | - | 4A，8A |
