- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 310
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 135 MPQ: 1
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IC DVR HISIDE DUAL LOSIDE 16SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR LOW SIDE/DUAL HI 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，20ns | 0.8V，3.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 135 MPQ: 1
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IC DVR HI SIDE DUAL 600V 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DVR HI SIDE DUAL 600V 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，20ns | 0.8V，3.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DVR HI SIDE DUAL 600V 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE DVR HALF BRIDGE 16SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，15ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 405 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A | ||
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Microchip Technology |
7,000
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3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
7,711
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
2,670
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Linear Technology/Analog Devices |
449
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
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Linear Technology/Analog Devices |
2,202
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 5 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
2,600
|
3 jours |
-
|
MOQ: 2600 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width)，14 Leads | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns，30ns | - | - | |||
|
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Microchip Technology |
4,582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width)，14 Leads | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns，30ns | - | - | |||
|
|
Microchip Technology |
4,582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
- | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width)，14 Leads | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns，30ns | - | - | |||
|
|
Microchip Technology |
226
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A |
