Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC21222D
Texas Instruments
148
3 jours
-
MOQ: 1  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
Tube - 3 V ~ 5.5 V 16-SOIC (0.154",3.90mm Width) CMOS/TTL Independent Half-Bridge 2 IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
UCC21222DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
4A/6A 2KVRMS DUAL CH ISO DR 8V
Tape & Reel (TR) - 3 V ~ 5.5 V 16-SOIC (0.154",3.90mm Width) CMOS/TTL Independent Half-Bridge 2 IGBT,N-Channel MOSFET - 5ns,6ns 1.25V,1.6V 4A,6A
IX6R11S3
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
HALF BRIDGE DRIVER 16-SOIC
Tube - 10 V ~ 35 V 16-SOIC (0.295",7.50mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V 6A,6A
IX6R11S3T/R
IXYS
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 4A 16-SOIC
Tape & Reel (TR) - 10 V ~ 35 V 16-SOIC (0.295",7.50mm Width) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.6V 6A,6A
NCV5700DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IGBT GATE DRIVER
Tape & Reel (TR) Automotive,AEC-Q100 20V 16-SOIC (0.154",3.90mm Width) - Synchronous High-Side or Low-Side - IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCV5700DR2G
ON Semiconductor
2,107
3 jours
-
MOQ: 1  MPQ: 1
IGBT GATE DRIVER
Cut Tape (CT) Automotive,AEC-Q100 20V 16-SOIC (0.154",3.90mm Width) - Synchronous High-Side or Low-Side - IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCV5700DR2G
ON Semiconductor
2,107
3 jours
-
MOQ: 1  MPQ: 1
IGBT GATE DRIVER
- Automotive,AEC-Q100 20V 16-SOIC (0.154",3.90mm Width) - Synchronous High-Side or Low-Side - IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
METAL SPIN OF NCD5702. HI
Tape & Reel (TR) - 5.5V 16-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 1 IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
METAL SPIN OF NCD5702. HI
Cut Tape (CT) - 5.5V 16-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 1 IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A
NCD5702DR2G
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
METAL SPIN OF NCD5702. HI
- - 5.5V 16-SOIC (0.154",3.90mm Width) Inverting Independent Half-Bridge 1 IGBT - 9.2ns,7.9ns 0.75V,4.3V 7.8A,6.8A