- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 7
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 3.5A，3.5A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 4A，4A | ||
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|
IXYS |
Enquête
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- |
-
|
MOQ: 46 MPQ: 1
|
IC MOSFET DRVR DUAL 4A 16-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Low-Side | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 4A，4A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 3.5A，3.5A |
