- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 62
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
|
|
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Infineon Technologies |
5,148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
|
|
|
Infineon Technologies |
5,148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
|
|
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Infineon Technologies |
1,538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
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Texas Instruments |
3,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
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|
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Texas Instruments |
160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
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|
|
ON Semiconductor |
1,048
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
|
|
|
ON Semiconductor |
1,048
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tape & Reel (TR) | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tape & Reel (TR) | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16SOIC
|
Tape & Reel (TR) | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16SOIC
|
Tape & Reel (TR) | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16SOIC
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
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ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC GATE DVR HALF BRIDGE 16SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Half-Bridge | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
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Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Inverting | Low-Side | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V |
