- Packaging：
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- Operating Temperature：
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- Input Type：
-
- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 8
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Input Type | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Tape & Reel (TR) | -40°C ~ 150°C (TJ) | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
|
|
|
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Cut Tape (CT) | -40°C ~ 150°C (TJ) | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
|
|
|
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
- | -40°C ~ 150°C (TJ) | - | IGBT，N-Channel，P-Channel MOSFET | 25ns，15ns | 2A，3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Tape & Reel (TR) | 125°C (TJ) | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Cut Tape (CT) | 125°C (TJ) | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
- | 125°C (TJ) | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 90 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tube | -55°C ~ 150°C (TJ) | Non-Inverting | IGBT，N-Channel MOSFET | 25ns，17ns | 2A，2.5A |
