- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 310
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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-
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MOQ: 46 MPQ: 1
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IC MOSFET DRVR DUAL 4A 16-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DVR FULL BRIDGE HI/LOW 16SOIC
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1.2A，1.2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET HALF BRIDGE DVR 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET HALF BRIDGE DVR 16SOIC
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Cut Tape (CT) | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET HALF BRIDGE DVR 16SOIC
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- | - | 10 V ~ 13.5 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | - | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMP SWITCH FET DRIVER 16SOIC
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMP SWITCH FET DRIVER 16SOIC
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMPLEMNT SW FET DRVR 16-SOIC
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Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMP SW FET DRVR 16-SOIC
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Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH SIDE DUAL 16-SOIC
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- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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Cut Tape (CT) | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE DUAL 16SOIC
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- | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DVR DUAL HIGH SIDE 16-SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 135 MPQ: 1
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IC DVR HISIDE DUAL LOSIDE 16SOIC
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Tube | - | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA |
