- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 310
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 4000 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 16-SOIC
|
Tape & Reel (TR) | - | 25V (Max) | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 480 MPQ: 1
|
IC DRIVER H-BRIDGE 16-SOIC
|
Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-SOIC
|
Tape & Reel (TR) | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 46 MPQ: 1
|
HALF BRIDGE DRIVER 16-SOIC
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Tube | - | 10 V ~ 35 V | -40°C ~ 125°C (TA) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.6V | 6A,6A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
|
IC DRIVER MOSF DUAL HI/LO 16SOIC
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 658 MPQ: 1
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IC DVR CMOS QUAD 40MHZ 16-SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 4000 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 16-SOIC
|
Tape & Reel (TR) | - | 25V (Max) | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width) | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 960 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HISIDE N-CH 3PH 16SOIC
|
Tape & Reel (TR) | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns,30ns | 1V,2.5V | - | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 276 MPQ: 1
|
IC DRVR HALF BRIDGE 2A 16-SOIC
|
Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 8ns,7ns | 6V,9.6V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 2A 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 8ns,7ns | 6V,9.6V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 230 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-SOIC
|
Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-SOIC
|
Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 125°C (TA) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.6V | 6A,6A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 368 MPQ: 1
|
IC DRIVER HALF BRDG 600MA 16-SOI
|
Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 600mA,600mA | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HALF BRDG 600MA 16-SOI
|
Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 600mA,600mA |