- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 310
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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-
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MOQ: 80 MPQ: 1
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IC DUAL OUTPUT DRIVER 16-SOIC
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DUAL OUTPUT DRIVER 16-SOIC
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DUAL HS FET DRIVER 16-SOIC
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Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DUAL CHAN PWR DRIVER 16-SOIC
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DUAL NON-INV PWR DRVR 16-SOIC
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DUAL NON-INV PWR DRVR 16SOIC
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Tube | - | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 135 MPQ: 1
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IC MOSFET DRIVER LIMITING 16SOIC
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Tube | - | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 90 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
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Tape & Reel (TR) | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER LIMITING 16SOIC
|
Tape & Reel (TR) | - | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMPLEMNT SW FET DRVR 16-SOIC
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Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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IC COMP SW FET DRVR 16-SOIC
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Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A |
