- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 310
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
Microchip Technology |
994
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 70°C | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
566
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
566
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
364
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A |
