- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 310
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Linear Technology/Analog Devices |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH16SOIC
|
Tube | - | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR N-CH 16-SOIC
|
Tube | - | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
849
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
Tube | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width)，14 Leads | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns，30ns | - | - | |||
|
|
Microchip Technology |
122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Linear Technology/Analog Devices |
250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE QUAD16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
|
|
Microchip Technology |
157
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Tape & Reel (TR) | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 18ns，19ns | - | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
Cut Tape (CT) | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 18ns，19ns | - | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,483
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH CURRENT IGBT GATE DRIVER
|
- | - | 20V | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 18ns，19ns | - | 7.8A，6.8A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IGBT GATE DRIVER
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
Cut Tape (CT) | Automotive，AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | Automotive，AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
994
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 70°C | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A |
