- Voltage - Supply:
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- Operating Temperature:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 237
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
566
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
364
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC LDO REG W/SD 5V 16-SOIC
|
Tape & Reel (TR) | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC | Inverting,Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns,120ns | 0.8V,2V | 500mA,500mA | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC LDO REG W/SD 5V 16-SOIC
|
Cut Tape (CT) | - | - | - | 16-SOIC | - | - | - | - | - | - | - | - | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC LDO REG W/SD 5V 16-SOIC
|
- | - | - | - | 16-SOIC | - | - | - | - | - | - | - | - | - | ||||
Microchip Technology |
33
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
43
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A |