- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 40
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
Tube | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
IXYS |
Enquête
|
- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
|
|
Microchip Technology |
101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
364
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
33
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4.5A DL HS 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 12ns，12ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 282 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 16SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 329 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 28ns，32ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 282 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 23ns，25ns | 0.8V，2.4V | 3A，3A |
