Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2213SPBF
Infineon Technologies
1,784
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
FAN73912MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
Tape & Reel (TR) - 12 V ~ 20 V -40°C ~ 150°C (TJ) - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 25ns,15ns 6V,9.5V 2A,3A
FAN73912MX
ON Semiconductor
823
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
Cut Tape (CT) - 12 V ~ 20 V -40°C ~ 150°C (TJ) - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 25ns,15ns 6V,9.5V 2A,3A
FAN73912MX
ON Semiconductor
823
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 16SOIC
- - 12 V ~ 20 V -40°C ~ 150°C (TJ) - Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 25ns,15ns 6V,9.5V 2A,3A
IR2213STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
Tape & Reel (TR) - 12 V ~ 20 V 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IR2213STRPBF
Infineon Technologies
95
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
Cut Tape (CT) - 12 V ~ 20 V 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IR2213STRPBF
Infineon Technologies
95
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HI/LO SIDE 16-SOIC
- - 12 V ~ 20 V 125°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IR2213S
Infineon Technologies
Enquête
-
-
MOQ: 90  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 25ns,17ns 6V,9.5V 2A,2.5A
IXBD4410SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC LOW SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 15ns,15ns 1V,3.65V 2A,2A
IXBD4411SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC HIGH SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V -40°C ~ 150°C (TJ) Non-Inverting Single High-Side 1 IGBT,N-Channel,P-Channel MOSFET 15ns,15ns 1V,3.65V 2A,2A