- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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Découvrez les produits 10
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 25ns,15ns | 6V,9.5V | 2A,3A | ||||
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 25ns,15ns | 6V,9.5V | 2A,3A | ||||
ON Semiconductor |
823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | - | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 25ns,15ns | 6V,9.5V | 2A,3A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI/LO SIDE 16-SOIC
|
- | - | 12 V ~ 20 V | 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 90 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 46 MPQ: 1
|
IC LOW SIDE DRIVER 16SOIC
|
Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 15ns,15ns | 1V,3.65V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 46 MPQ: 1
|
IC HIGH SIDE DRIVER 16SOIC
|
Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | 15ns,15ns | 1V,3.65V | 2A,2A |