- Voltage - Supply：
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- Operating Temperature：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 102
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
8,992
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
8,823
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
|
|
|
Infineon Technologies |
2,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
1,538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
|
|
|
Infineon Technologies |
602
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 16SOIC
|
- | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
2,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER LIMITING 1CHAN 16-SOIC
|
- | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
|
|
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Texas Instruments |
257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL OUTPUT DRIVER 16-SOIC
|
- | 5 V ~ 40 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
3,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
- | 5 V ~ 35 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16-SOIC
|
- | 5 V ~ 35 V | -25°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
|
|
|
Texas Instruments |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
- | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
224
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL CH PWR DRIVER 16-SOIC
|
- | 5 V ~ 40 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR 16-SOIC
|
- | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
|
|
|
Infineon Technologies |
141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET IGBT DRIVER 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 16-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS FET DRIVER 16-SOIC
|
- | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
Texas Instruments |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL CHAN PWR DRIVER 16-SOIC
|
- | 5 V ~ 40 V | -25°C ~ 85°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HIGH/LOW 600V 16SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 120 MPQ: 1
|
IC DUAL CH PWR DRIVER 16-SOIC
|
- | 5 V ~ 40 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A |
