Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IR2110STRPBF
Infineon Technologies
22,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tape & Reel (TR) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2110STRPBF
Infineon Technologies
22,868
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Cut Tape (CT) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2110STRPBF
Infineon Technologies
22,868
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
- - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2113STRPBF
Infineon Technologies
7,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tape & Reel (TR) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IR2113STRPBF
Infineon Technologies
7,166
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Cut Tape (CT) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IR2113STRPBF
Infineon Technologies
7,166
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
- - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IR2110SPBF
Infineon Technologies
8,823
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16SOIC
Tube - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2113SPBF
Infineon Technologies
1,498
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IX2113BTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HIGH/LOW 600V 16SOIC
Tape & Reel (TR) - 10 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 9.4ns,9.7ns 6V,9.5V
IX2113B
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HIGH/LOW 600V 16SOIC
Tube - 10 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel,P-Channel MOSFET 600V 9.4ns,9.7ns 6V,9.5V
98-0247
Infineon Technologies
Enquête
-
-
MOQ: 180  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tube - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IR2110S
Infineon Technologies
Enquête
-
-
MOQ: 180  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tube - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2110STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRIVER HIGH/LOW SIDE 16-SOIC
Tape & Reel (TR) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V
IR2113STR
Infineon Technologies
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 16SOIC
Tape & Reel (TR) - 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 25ns,17ns 6V,9.5V
IX2R11S3
IXYS
Enquête
-
-
MOQ: 276  MPQ: 1
IC DRVR HALF BRIDGE 2A 16-SOIC
Bulk - 10 V ~ 35 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 8ns,7ns 6V,9.6V
IX2R11S3T/R
IXYS
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRVR HALF BRIDGE 2A 16-SOIC
Tape & Reel (TR) - 10 V ~ 35 V Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 8ns,7ns 6V,9.6V
IXBD4410SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC LOW SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET 1200V 15ns,15ns 1V,3.65V
IXBD4411SI
IXYS
Enquête
-
-
MOQ: 46  MPQ: 1
IC HIGH SIDE DRIVER 16SOIC
Tube ISOSMART 10 V ~ 20 V Single High-Side 1 IGBT,N-Channel,P-Channel MOSFET 1200V 15ns,15ns 1V,3.65V