- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 237
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 46 MPQ: 1
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HALF BRIDGE DRIVER 16-SOIC
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Tube | - | 10 V ~ 35 V | -40°C ~ 125°C (TA) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | 6A，6A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC DRIVER MOSF DUAL HI/LO 16SOIC
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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IXYS |
Enquête
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- |
-
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MOQ: 276 MPQ: 1
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IC DRVR HALF BRIDGE 2A 16-SOIC
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Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 8ns，7ns | 6V，9.6V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRVR HALF BRIDGE 2A 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 8ns，7ns | 6V，9.6V | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 230 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-SOIC
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Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRVR HALF BRIDGE 4A 16-SOIC
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 125°C (TA) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | 6A，6A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 368 MPQ: 1
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IC DRIVER HALF BRDG 600MA 16-SOI
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Bulk | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 600mA，600mA | ||
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IXYS |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER HALF BRDG 600MA 16-SOI
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Tape & Reel (TR) | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 650V | 23ns，22ns | 6V，7V | 600mA，600mA | ||
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IXYS |
Enquête
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- |
-
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MOQ: 46 MPQ: 1
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IC MOSFET DRVR DUAL 4A 16-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE DVR HALF BRIDGE 16SOIC
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，15ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 405 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | 3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 6V，9.5V | 2.5A，2.5A | ||
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Microchip Technology |
7,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
7,711
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
2,670
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Linear Technology/Analog Devices |
449
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 1/2BRDG NCH16SOIC
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Tube | - | 5 V ~ 30 V | 0°C ~ 125°C (TJ) | 16-SOIC | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 56V | 130ns，120ns | 0.8V，2V | 500mA，500mA |
