Package / Case:
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Découvrez les produits 1,735
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MIC4606-1YML-T5
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
IC MOSFET DVR 85V FULL BRIDGE
Cut Tape (CT) - 5.25 V ~ 16 V 16-VFQFN Exposed Pad 16-QFN (4x4) Surface Mount Inverting,Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 108V 20ns,20ns 0.8V,2.2V 1A,1A
NCP5106BMNTWG
ON Semiconductor
Enquête
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MOQ: 4000  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Tape & Reel (TR) - 10 V ~ 20 V 10-VDFN Exposed Pad 10-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5106BMNTWG
ON Semiconductor
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Cut Tape (CT) - 10 V ~ 20 V 10-VDFN Exposed Pad 10-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5106BMNTWG
ON Semiconductor
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
- - 10 V ~ 20 V 10-VDFN Exposed Pad 10-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109BMNTWG
ON Semiconductor
Enquête
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MOQ: 3000  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Tape & Reel (TR) - 10 V ~ 20 V 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109BMNTWG
ON Semiconductor
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
Cut Tape (CT) - 10 V ~ 20 V 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5109BMNTWG
ON Semiconductor
Enquête
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MOQ: 1  MPQ: 1
IC DRIVER HI/LO 600V 10DFN
- - 10 V ~ 20 V 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 200V 85ns,35ns 0.8V,2.3V 250mA,500mA
RT7027GN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HALF-BRIDGE GATE DRVR DIP8
Tube - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
HT0440K6-G
Microchip Technology
Enquête
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MOQ: 3000  MPQ: 1
IC MOSFET DRIVER HI VOLT 400V 10
Tape & Reel (TR) - 3.15 V ~ 5.5 V 10-VFDFN Exposed Pad 10-DFN (3x4) Surface Mount Non-Inverting Synchronous High-Side 2 N-Channel MOSFET 400V 650μs,3ms (Max) 0.5V,3.15V -
HT0440K6-G
Microchip Technology
2,615
3 jours
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MOQ: 1  MPQ: 1
IC MOSFET DRIVER HI VOLT 400V 10
Cut Tape (CT) - 3.15 V ~ 5.5 V 10-VFDFN Exposed Pad 10-DFN (3x4) Surface Mount Non-Inverting Synchronous High-Side 2 N-Channel MOSFET 400V 650μs,3ms (Max) 0.5V,3.15V -
HT0440K6-G
Microchip Technology
2,615
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HI VOLT 400V 10
- - 3.15 V ~ 5.5 V 10-VFDFN Exposed Pad 10-DFN (3x4) Surface Mount Non-Inverting Synchronous High-Side 2 N-Channel MOSFET 400V 650μs,3ms (Max) 0.5V,3.15V -
NCP81063MNTXG
ON Semiconductor
Enquête
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MOQ: 3000  MPQ: 1
IC MOSFET DVR SYNC BUCK 8DFN
- - 4.5 V ~ 13.2 V 8-VFDFN Exposed Pad 8-DFN (3x3) Surface Mount Non-Inverting Synchronous High-Side or Low-Side 1 N-Channel,P-Channel MOSFET - 30ns,27ns 0.7V,3.4V 2.5A,1.6A
LTC4449EDCB
Linear Technology/Analog Devices
Enquête
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MOQ: 0  MPQ: 1
IC POWER MANAGEMENT
Tube - 4 V ~ 6.5 V 8-WFDFN Exposed Pad 8-DFN (2x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 42V 8ns,7ns 3V,6.5V 3.2A,4.5A
LTC4449IDCB
Linear Technology/Analog Devices
Enquête
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MOQ: 0  MPQ: 1
IC POWER MANAGEMENT
Tube - 4 V ~ 6.5 V 8-WFDFN Exposed Pad 8-DFN (2x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 42V 8ns,7ns 3V,6.5V 3.2A,4.5A
RT7020GN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HALF-BRIDGE GATE DRVR DIP8
Tube - 10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-DIP Through Hole Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA