- Series:
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- Voltage - Supply:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 115
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Analog Devices Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
2,170
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,855
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Analog Devices Inc. |
1,855
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4A DUAL HS 8SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns,10ns | 0.8V,2V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns,18ns | - | 1.25A,2A | ||||
Renesas Electronics America Inc. |
4,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
Cut Tape (CT) | - | 10.8 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns,18ns | - | 1.25A,2A | ||||
Renesas Electronics America Inc. |
4,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SYNC BUCK 8EPSOIC
|
- | - | 10.8 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns,18ns | - | 1.25A,2A | ||||
Renesas Electronics America Inc. |
1,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.22V,2.08V | 6A,6A | ||||
Renesas Electronics America Inc. |
802
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.85V,3.15V | 6A,6A | ||||
Renesas Electronics America Inc. |
559
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.85V,3.15V | 6A,6A | ||||
Renesas Electronics America Inc. |
486
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.85V,3.15V | 6A,6A | ||||
Renesas Electronics America Inc. |
335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.22V,2.08V | 6A,6A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.22V,2.08V | 6A,6A | ||||
Renesas Electronics America Inc. |
2,424
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns,20ns | 1.22V,2.08V | 6A,6A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER
|
Tape & Reel (TR) | - | 9 V ~ 16 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 15ns,9ns | 1V,2.4V | - | ||||
Monolithic Power Systems Inc. |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER
|
Tube | - | 9 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 12ns,9ns | 1V,2.4V | 2.5A,2.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 8EPSOIC
|
Tape & Reel (TR) | - | 10.8 V ~ 13.2 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 26ns,18ns | - | 1.25A,2A |