Découvrez les produits 115
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ADP3654ARDZ-RL
Analog Devices Inc.
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
2,170
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-RL
Analog Devices Inc.
2,170
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
- - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,855
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
Cut Tape (CT) - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ADP3654ARDZ-R7
Analog Devices Inc.
1,855
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 4A DUAL HS 8SOIC
- - 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 10ns,10ns 0.8V,2V 4A,4A
ISL6613AEIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AEIBZ-T
Renesas Electronics America Inc.
4,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
Cut Tape (CT) - 10.8 V ~ 13.2 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL6613AEIBZ-T
Renesas Electronics America Inc.
4,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR SYNC BUCK 8EPSOIC
- - 10.8 V ~ 13.2 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A
ISL89164FBEAZ
Renesas Electronics America Inc.
1,833
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89165FBEBZ
Renesas Electronics America Inc.
802
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89163FBEBZ
Renesas Electronics America Inc.
559
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89164FBEBZ
Renesas Electronics America Inc.
486
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 5.0V 6A 8SOIC
Tube - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89163FBEAZ
Renesas Electronics America Inc.
335
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tube - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89165FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89165FBEAZ-T
Renesas Electronics America Inc.
2,424
3 jours
-
MOQ: 1  MPQ: 1
MOSFET DRIVER 2CH 3.3V 6A 8SOIC
Cut Tape (CT) - 4.5 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
MP18021HN-A-LF-Z
Monolithic Power Systems Inc.
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
MP18024HN-LF-Z
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRIVER
Tape & Reel (TR) - 9 V ~ 16 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 15ns,9ns 1V,2.4V -
MP18021HN-A-LF
Monolithic Power Systems Inc.
Enquête
-
-
MOQ: 100  MPQ: 1
IC GATE DRIVER
Tube - 9 V ~ 18 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 12ns,9ns 1V,2.4V 2.5A,2.5A
ISL6612EIBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Tape & Reel (TR) - 10.8 V ~ 13.2 V 8-SOIC (0.154",3.90mm Width) Exposed Pad Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 26ns,18ns - 1.25A,2A