- Voltage - Supply:
-
- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 31
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
Tube | 10 V ~ 15.4 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns,50ns | - | 180mA,260mA | ||||
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | 4.5 V ~ 15 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-DIP
|
Tube | 10 V ~ 15.4 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns,50ns | - | 180mA,260mA | ||||
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | 4.5 V ~ 16 V | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | 4.5 V ~ 16 V | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | 4.5 V ~ 18 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 18000 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 350 MPQ: 1
|
IC DRVR HALF BRDG SELF-OSC 8-DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 200 MPQ: 1
|
IC HALF BRIDGE DRIVER W/DIO 8DIP
|
Tube | 10 V ~ 15.6 V | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC MONO PIN DVR HS 8DIP
|
Tube | 4.5 V ~ 16 V | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | - | 4ns,4ns | 0.6V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8DIP
|
Tube | 4.5 V ~ 16.5 V | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8DIP
|
Tube | 4.5 V ~ 16.5 V | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 15 V | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 15 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 16 V | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 600 MPQ: 1
|
IC DVR HS DUAL MOSFET 8DIP
|
Tube | 4.5 V ~ 16 V | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A |