Découvrez les produits 31
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR21531DPBF
Infineon Technologies
18,868
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IRS2153DPBF
Infineon Technologies
2,498
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRIDGE SELF OSC 8DIP
Tube 10 V ~ 15.4 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 120ns,50ns - 180mA,260mA
IR2153PBF
Infineon Technologies
2,820
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRIDGE OSC 8DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2153DPBF
Infineon Technologies
1,963
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
EL7212CNZ
Renesas Electronics America Inc.
1,372
3 jours
-
MOQ: 1  MPQ: 1
IC PWR MOSFET DVR DUAL HS 8DIP
Tube 4.5 V ~ 15 V Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
IRS21531DPBF
Infineon Technologies
3,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR SELF-OSC HALF BRG 8-DIP
Tube 10 V ~ 15.4 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 120ns,50ns - 180mA,260mA
EL7104CNZ
Renesas Electronics America Inc.
771
3 jours
-
MOQ: 1  MPQ: 1
IC PWR MOSFET DVR SNGL 8-DIP
Bulk 4.5 V ~ 16 V Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 4A,4A
EL7242CNZ
Renesas Electronics America Inc.
531
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-DIP
Tube 4.5 V ~ 16 V Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 0.8V,2.4V 2A,2A
ISL89411IPZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRVR MOSFET DUAL-CH 8DIP
Bulk 4.5 V ~ 18 V Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
IR21531PBF
Infineon Technologies
Enquête
-
-
MOQ: 18000  MPQ: 1
IC DVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR21531
Infineon Technologies
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR21531D
Infineon Technologies
Enquête
-
-
MOQ: 350  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2153D
Infineon Technologies
Enquête
-
-
MOQ: 200  MPQ: 1
IC HALF BRIDGE DRIVER W/DIO 8DIP
Tube 10 V ~ 15.6 V RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
EL7154CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC MONO PIN DVR HS 8DIP
Tube 4.5 V ~ 16 V Non-Inverting Synchronous High-Side or Low-Side 2 IGBT,N-Channel MOSFET - 4ns,4ns 0.6V,2.4V 4A,4A
EL7155CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
Tube 4.5 V ~ 16.5 V Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 0.8V,2.4V 3.5A,3.5A
EL7156CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
Tube 4.5 V ~ 16.5 V Non-Inverting Single High-Side or Low-Side 1 IGBT - 14.5ns,15ns 0.8V,2.4V 3.5A,3.5A
EL7202CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube 4.5 V ~ 15 V Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
EL7212CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube 4.5 V ~ 15 V Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 0.8V,2.4V 2A,2A
EL7242CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube 4.5 V ~ 16 V Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 0.8V,2.4V 2A,2A
EL7252CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube 4.5 V ~ 16 V Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 0.8V,2.4V 2A,2A