- Packaging：
-
- Voltage - Supply：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 19
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
2,505
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
|
- | μHVIC | 10 V ~ 18 V | SOT-23-6 | SOT-23-6 | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
Tape & Reel (TR) | EiceDriver | 10 V ~ 17.5 V | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
Cut Tape (CT) | EiceDriver | 10 V ~ 17.5 V | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
|
- | EiceDriver | 10 V ~ 17.5 V | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Tube | Automotive，AEC-Q100 | 24 V ~ 150 V | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
Cut Tape (CT) | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
- | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
Cut Tape (CT) | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
- | - | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA |
