PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

Series：

Voltage - Supply：

Package / Case：

Supplier Device Package：

Mounting Type：

Input Type：

Channel Type：

Driven Configuration：

Number of Drivers：

Gate Type：

High Side Voltage - Max (Bootstrap)：

Rise / Fall Time (Typ)：

Logic Voltage - VIL, VIH：

Current - Peak Output (Source, Sink)：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
	LM5100AM/NOPB	Texas Instruments	3,780	3 jours	-	IC DVR HALF-BRIDGE HV 8-SOIC MOQ: 1 MPQ: 1	IC DVR HALF-BRIDGE HV 8-SOIC	-	9 V ~ 14 V	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Non-Inverting	Independent	Half-Bridge	2	N-Channel MOSFET	118V	430ns，260ns	2.3V，-	3A，3A
	EL7104CNZ	Renesas Electronics America Inc.	771	3 jours	-	IC PWR MOSFET DVR SNGL 8-DIP MOQ: 1 MPQ: 1	IC PWR MOSFET DVR SNGL 8-DIP	-	4.5 V ~ 16 V	8-DIP (0.300"，7.62mm)	8-PDIP	Through Hole	Non-Inverting	Single	Low-Side	1	N-Channel，P-Channel MOSFET	-	7.5ns，10ns	0.8V，2.4V	4A，4A
	ISL89412IBZ	Renesas Electronics America Inc.	3,007	3 jours	-	IC DRVR MOSFET DUAL-CH 8-SOIC MOQ: 1 MPQ: 1	IC DRVR MOSFET DUAL-CH 8-SOIC	-	4.5 V ~ 18 V	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	7.5ns，10ns	0.8V，2.4V	2A，2A
	ISL89411IBZ	Renesas Electronics America Inc.	1,927	3 jours	-	IC DRVR MOSFET DUAL-CH 8-SOIC MOQ: 1 MPQ: 1	IC DRVR MOSFET DUAL-CH 8-SOIC	-	4.5 V ~ 18 V	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	7.5ns，10ns	0.8V，2.4V	2A，2A
	ISL89410IBZ	Renesas Electronics America Inc.	1,719	3 jours	-	IC DRVR MOSFET DUAL-CH 8-SOIC MOQ: 1 MPQ: 1	IC DRVR MOSFET DUAL-CH 8-SOIC	-	4.5 V ~ 18 V	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	Non-Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	7.5ns，10ns	0.8V，2.4V	2A，2A
	ISL89411IPZ	Renesas Electronics America Inc.	Enquête	-	-	IC DRVR MOSFET DUAL-CH 8DIP MOQ: 2000 MPQ: 1	IC DRVR MOSFET DUAL-CH 8DIP	-	4.5 V ~ 18 V	8-DIP (0.300"，7.62mm)	8-PDIP	Through Hole	Inverting	Independent	Low-Side	2	N-Channel，P-Channel MOSFET	-	7.5ns，10ns	0.8V，2.4V	2A，2A
	SI9976DY-E3	Vishay Siliconix	Enquête	-	-	IC DRVR MOSF 1/2BRDG N-CH 14SOIC MOQ: 550 MPQ: 1	IC DRVR MOSF 1/2BRDG N-CH 14SOIC	-	4.5 V ~ 16.5 V	14-SOIC (0.154"，3.90mm Width)	14-SOIC	Surface Mount	Non-Inverting	Synchronous	Half-Bridge	2	N-Channel MOSFET	40V	110ns，50ns	1V，4V	500mA，500mA
	6ED003L06C2X1SA1	Infineon Technologies	Enquête	-	-	IC GATE DVR 3-PH 600V DIE MOQ: 1 MPQ: 1	IC GATE DVR 3-PH 600V DIE	EiceDriver	13 V ~ 17.5 V	Die	Chip	Surface Mount	Non-Inverting	3-Phase	Half-Bridge	6	IGBT	600V	60ns，26ns	1.1V，1.7V	-
	6EDL04I06NCX1SA1	Infineon Technologies	Enquête	-	-	IC GATE DVR 3-PH 600V DIE MOQ: 1 MPQ: 1	IC GATE DVR 3-PH 600V DIE	EiceDriver	13 V ~ 17.5 V	Die	Chip	Surface Mount	Non-Inverting	3-Phase	Half-Bridge	6	IGBT	600V	60ns，26ns	1.1V，1.7V	-
	6EDL04I06PCX1SA1	Infineon Technologies	Enquête	-	-	IC GATE DVR 3-PH 600V DIE MOQ: 1 MPQ: 1	IC GATE DVR 3-PH 600V DIE	EiceDriver	13 V ~ 17.5 V	Die	Chip	Surface Mount	Non-Inverting	3-Phase	Half-Bridge	6	IGBT	600V	60ns，26ns	1.1V，1.7V	-
	6EDL04N06PCX1SA1	Infineon Technologies	Enquête	-	-	IC GATE DVR 3-PH 600V DIE MOQ: 1 MPQ: 1	IC GATE DVR 3-PH 600V DIE	EiceDriver	13 V ~ 17.5 V	Die	Chip	Surface Mount	Non-Inverting	3-Phase	Half-Bridge	6	IGBT	600V	60ns，26ns	1.1V，1.7V	-

Envoyé avec succès!