- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 946
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
4,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
1,031
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.7V,2.3V | 290mA,600mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
2,536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
24,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
24,216
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
|
- | - | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
10,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
11,376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 8.3V,12.6V | 250mA,500mA | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
STMicroelectronics |
1,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
1,925
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 200ns,100ns | 0.8V,2.3V | 60mA,130mA |