- Packaging：
-
- Series：
-
- Operating Temperature：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 18
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
|
- | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR DUAL HIGH SIDE 16-SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HISIDE DUAL LOSIDE 16SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HISIDE DUAL LOSIDE 16SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DVR LOW SIDE/DUAL HI 16-SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 60ns，20ns | 0.8V，3.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 135 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16-SOIC
|
Tube | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 60ns，20ns | 0.8V，3.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE DUAL 600V 16SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | High-Side | 2 | IGBT，N-Channel MOSFET | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A |
