- Series:
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- Operating Temperature:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 74
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,354
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28SOIC
|
- | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
1,141
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,494
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 125°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
2,004
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
1,010
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | -40°C ~ 150°C (TJ) | 28-SOIC | Non-Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3PH 28SOIC
|
- | - | -40°C ~ 150°C (TJ) | 28-SOIC | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SO | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA | ||||
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SO | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA | ||||
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
- | - | -40°C ~ 150°C (TJ) | 28-SO | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 0.8V,2.4V | 200mA,350mA |