Découvrez les produits 74
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Supplier Device Package Input Type Channel Type Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2136SPBF
Infineon Technologies
2,354
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR2130STRPBF
Infineon Technologies
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2130STRPBF
Infineon Technologies
2,088
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28SOIC
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2130STRPBF
Infineon Technologies
2,088
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28SOIC
- - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IRS2336DSTRPBF
Infineon Technologies
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2336DSTRPBF
Infineon Technologies
1,141
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IRS2336DSTRPBF
Infineon Technologies
1,141
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER HV 3PHASE 28-SOIC
- - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,2.5V 200mA,350mA
IR2131SPBF
Infineon Technologies
2,050
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - -40°C ~ 150°C (TJ) 28-SOIC Inverting Independent IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
IR2130SPBF
Infineon Technologies
1,494
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-SOIC
Tube - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2133SPBF
Infineon Technologies
1,088
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - 125°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR2132SPBF
Infineon Technologies
2,004
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER BRIDGE 3PHASE 28SOIC
Tube - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
FAN73895MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SOIC Non-Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73895MX
ON Semiconductor
1,010
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SOIC Non-Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73895MX
ON Semiconductor
1,010
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
- - -40°C ~ 150°C (TJ) 28-SOIC Non-Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73892MX
ON Semiconductor
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73892MX
ON Semiconductor
948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
FAN73892MX
ON Semiconductor
948
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HALF BRDG 3PH 28SOIC
- - -40°C ~ 150°C (TJ) 28-SOIC Inverting 3-Phase IGBT,N-Channel MOSFET 600V 50ns,30ns 0.8V,2.5V 350mA,650mA
DGD2136S28-13
Diodes Incorporated
Enquête
-
-
MOQ: 1500  MPQ: 1
HV GATE DRIVER SO-28
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SO Inverting 3-Phase IGBT,N-Channel MOSFET 600V 90ns,35ns 0.8V,2.4V 200mA,350mA
DGD2136S28-13
Diodes Incorporated
1,204
3 jours
-
MOQ: 1  MPQ: 1
HV GATE DRIVER SO-28
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SO Inverting 3-Phase IGBT,N-Channel MOSFET 600V 90ns,35ns 0.8V,2.4V 200mA,350mA
DGD2136S28-13
Diodes Incorporated
1,204
3 jours
-
MOQ: 1  MPQ: 1
HV GATE DRIVER SO-28
- - -40°C ~ 150°C (TJ) 28-SO Inverting 3-Phase IGBT,N-Channel MOSFET 600V 90ns,35ns 0.8V,2.4V 200mA,350mA