Découvrez les produits 18
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
IR2011STRPBF
Infineon Technologies
12,500
3 jours
-
MOQ: 2500  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tape & Reel (TR) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011STRPBF
Infineon Technologies
14,762
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Cut Tape (CT) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011SPBF
Infineon Technologies
5,206
3 jours
-
MOQ: 1  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tube -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IRS2011SPBF
Infineon Technologies
3,476
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LOW SIDE 8-SOIC
Tube -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 25ns,15ns 0.8V,2.7V
IR2011PBF
Infineon Technologies
2,599
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IRS2011STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Tape & Reel (TR) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011STRPBF
Infineon Technologies
2,550
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
Cut Tape (CT) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011STRPBF
Infineon Technologies
2,550
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8-SOIC
- -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 25ns,15ns 0.7V,2.5V
IRS2011PBF
Infineon Technologies
41
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE 8DIP
Tube -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent 2 N-Channel MOSFET 200V 25ns,15ns 0.8V,2.7V
IR2011
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
HI/LO SIDE DRVR 8-DIP
Tube -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011S
Infineon Technologies
Enquête
-
-
MOQ: 285  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tube -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
IR2011STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
HI/LO SIDE DRVR 8SOIC
Tape & Reel (TR) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent 2 N-Channel MOSFET 200V 35ns,20ns 0.7V,2.2V
MIC4609YWM-TR
Microchip Technology
Enquête
-
-
MOQ: 1000  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
Tape & Reel (TR) -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V
MIC4609YWM-TR
Microchip Technology
275
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
Cut Tape (CT) -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V
MIC4609YWM-TR
Microchip Technology
275
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 28SOIC
- -40°C ~ 125°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SOIC Surface Mount Non-Inverting 3-Phase 6 IGBT,N-Channel,P-Channel MOSFET 600V 20ns,20ns 0.8V,2.2V
MIC4608YM
Microchip Technology
69
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 600V HALF 14SOIC
Tube -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 31ns,31ns 0.8V,2.2V
MIC4608YM-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 600V HALF 14SOIC
Tape & Reel (TR) -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 31ns,31ns 0.8V,2.2V
MIC4608YM-T5
Microchip Technology
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DVR 600V HALF 14SOIC
Tape & Reel (TR) -40°C ~ 125°C (TJ) 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Independent 2 IGBT,N-Channel MOSFET 600V 31ns,31ns 0.8V,2.2V