- Operating Temperature:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Current - Peak Output (Source, Sink):
-
- Conditions sélectionnées:
Découvrez les produits 4
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Driven Configuration | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Driven Configuration | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI LO SIDE 8-DIP
|
-40°C ~ 150°C (TJ) | Half-Bridge | 60ns,30ns | 350mA,650mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
-40°C ~ 125°C (TA) | High-Side or Low-Side | 70ns,35ns | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
-40°C ~ 125°C (TA) | High-Side or Low-Side | 70ns,35ns | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR DIP8
|
-40°C ~ 125°C (TJ) | Half-Bridge | 70ns,35ns | 300mA,600mA |