- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 946
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
3,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Infineon Technologies |
3,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.9V | 200mA,350mA | ||||
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
4,735
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Tape & Reel (TR) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
Cut Tape (CT) | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
- | EiceDriver | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-DSO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel,P-Channel MOSFET | 600V | 48ns,24ns | 1.1V,1.7V | - | ||||
Infineon Technologies |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,30ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
8,938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,30ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
8,938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
|
- | - | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,30ns | 0.8V,2.5V | 290mA,600mA | ||||
ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI/LOW SIDE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI/LOW SIDE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
4,734
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI/LOW SIDE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
6,144
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 14-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
4,982
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A |