- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 946
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-MLP
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-VDFN Exposed Pad | 16-MLP (7x6) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC DRVR HALF BRIDGE 4A 16-MLP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-VDFN Exposed Pad | 16-MLP (7x6) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 4A,4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LO 600V 8-DIP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8-DIP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 200 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8DIP
|
Tube | - | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Tape & Reel (TR) | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 15ns,10ns | - | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1800 MPQ: 1
|
IC GATE-DRIVE 3PH HALFBRDG 24SOP
|
Tube | - | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE-DRIVE 3PH HALFBRDG 24SOP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 81 MPQ: 1
|
IC DRVR BRIDGE 3-PHASE 44PLCC
|
Tube | Automotive,AEC-Q100 | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel,P-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 4000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Richtek USA Inc. |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR SOP8
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA |