- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
2,082
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,082
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV 8-SOIC
|
- | - | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
ON Semiconductor |
1,605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
ON Semiconductor |
1,605
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR HIGH VOLT 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LOW SIDE 8SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 28SOIC
|
- | - | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
Microchip Technology |
69
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 600V HALF 14SOIC
|
Tube | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 31ns，31ns | 0.8V，2.2V | 1A，1A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HV GATE DRIVER SO-8 T&R 2.5K
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
