- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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MOQ: 380 MPQ: 1
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IC DRIVER HIGH SIDE 600V 8SOIC
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Tube | Automotive，AEC-Q100 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，80ns | - | 500mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 285 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，35ns (Max) | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 285 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 220 MPQ: 1
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IC DRIVER HALF-BRIDGE 14SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，12ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 285 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，12ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 100 MPQ: 1
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IC GATE DRIVER HV 3PHASE 28SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 368 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16MLPQ
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Tube | - | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad | 16-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 368 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16MLPQ
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Tube | - | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad，14 Leads | 16-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 273 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16MLPQ
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Tube | - | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad，14 Leads | 16-MLPQ (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 273 MPQ: 1
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IC DRIVER HALF-BRIDGE 16MLPQ
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Tube | - | -40°C ~ 150°C (TJ) | 16-VFQFN Exposed Pad，14 Leads | 16-MLPQ (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 216 MPQ: 1
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IC GATE DVR HALF BRIDGE 14SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRIVER
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 950 MPQ: 1
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IC MOSFET DRIVER
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 570 MPQ: 1
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IC MOSFET DRIVER
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3120 MPQ: 1
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IC MOSFET DRIVER
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Tube | - | -40°C ~ 150°C (TJ) | 28-VFQFN Exposed Pad | 28-MLPQ (5x5) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 9500 MPQ: 1
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IC GATE DVR HIGH SIDE 8-SOIC
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Tube | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A |
