- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
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IC DVR 3-PHASE BRIDGE PLCC44
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Tube | - | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DVR 3-PHASE BRIDGE 28SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DVR HI/LOW SIDE 600V 8SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
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IC DVR HI/LOW SIDE 8SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRIVER HALF BRIDGE 8SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.2V | 200mA，350mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 8100 MPQ: 1
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IC GATE DRIVER HI SPEED 8-SOIC
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Tube | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.5V | 250mA，500mA | ||
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ON Semiconductor |
Enquête
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-
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MOQ: 8100 MPQ: 1
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IC GATE DVR HIGH SIDE 8-SOIC
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Tube | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE DVR HALF BRIDGE 16SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
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ON Semiconductor |
Enquête
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-
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MOQ: 8100 MPQ: 1
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IC GATE DVR HALF BRIDGE 8-SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 0.8V，2.5V | 2.5A，2.5A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4860 MPQ: 1
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IC GATE DVR HALF BRIDGE 14-SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 2.5A，2.5A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 4860 MPQ: 1
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IC GATE DVR HALF BRIDGE 14-SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 2.5A，2.5A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 9000 MPQ: 1
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IC GATE DVR HALF BRIDGE 14-SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
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IC DRVIER HALF-BRIDGE 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 285 MPQ: 1
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IC DRVIER HALF-BRIDGE 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 160ns，70ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
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IC DRIVER HIGH SIDE SGL 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，25ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DRIVER HIGH SIDE SGL 8SOIC
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Tube | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，25ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 475 MPQ: 1
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IC DRIVER HIGH SIDE 600V 8SOIC
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Tube | Automotive，AEC-Q100 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，80ns | - | 500mA，500mA |
