- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 946
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 4860 MPQ: 1
|
IC GATE DRIVER HI LO SIDE 14-SOP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRIVER HI LO SIDE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2160 MPQ: 1
|
IC GATE DRIVER 3HALF BRDG 20SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 8100 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 60ns,30ns | 0.8V,2.9V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 2160 MPQ: 1
|
IC GATE DVR 3CH HALF BRDG 20-SOP
|
Tube | - | -40°C ~ 150°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 200V | 50ns,30ns | 1V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 380 MPQ: 1
|
IC DVR MOSFET/IGBT N-CH 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.2V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HI SIDE SGL 600V 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI SIDE SGL 600V 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI SIDE SGL 600V 8SOIC
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- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR MOSFET/IGBT N-CH 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.2V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DVR MOSFET/IGBT N-CH 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.2V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET/IGBT N-CH 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 150ns,50ns | 0.8V,2.2V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 44-PLCC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR 3PH 600V 44-PLCC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead),32 Leads | 44-PLCC,32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA |