- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET IGBT DRIVER 8SOIC
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Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
25
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
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Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
4
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-DIP
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Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 500V 14-DIP
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Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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|
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Infineon Technologies |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tube | - | 125°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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Infineon Technologies |
10
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
Tube | - | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Infineon Technologies |
35
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Infineon Technologies |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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|
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Infineon Technologies |
5
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
Tube | - | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Through Hole | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HV 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE HV 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HV 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 200V 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 200V 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
