- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 946
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
40
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
40
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRDG 3CH 28SOIC
|
- | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 50ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
702
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
702
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
780
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
Infineon Technologies |
553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.5V | 1.9A,2.3A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 900V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 900V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 900V | 60ns,30ns | 0.8V,2.5V | 350mA,650mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 0.8V,2.5V | 2.5A,2.5A | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRDGE 14SO
|
Tube | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 75ns,35ns | 1.1V,1.9V | 290mA,430mA | ||||
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A HIGH/LOW 14SOIC
|
Tube | - | -40°C ~ 125°C (TJ) | 14-SOIC (0.154",3.90mm Width) | 14-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 15ns,15ns | 1.45V,2V | 4A,4A |