- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
95
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.7V，2.3V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
84
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 16-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
106
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
265
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
45
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，30ns | 0.8V，2.2V | 220mA，480mA | ||
|
|
|
Texas Instruments |
903
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
620-V，1.8-A，2.8-A HIGH-SIDE LO
|
Tube | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Infineon Technologies |
248
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
961
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
799
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 200V 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，13ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Diodes Incorporated |
891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，13ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Diodes Incorporated |
891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 16SO
|
- | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，13ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
342
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
