- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
|
|
|
ON Semiconductor |
1,048
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
|
|
|
ON Semiconductor |
1,048
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR MONO HI/LO 16SOP
|
- | - | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
|
|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,450
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,450
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
- | Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.6V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,360
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.6V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,360
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.6V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
700V GATE DRIVER
|
Tape & Reel (TR) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Cut Tape (CT) | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
- | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
|
|
|
Diodes Incorporated |
1,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
|
|
|
Diodes Incorporated |
1,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SO
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A |
