- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 946
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
3,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
4,250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 200V 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,051
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 200V 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
4,309
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
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Texas Instruments |
2,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER- 0.5A/1A PEAK C
|
Tube | - | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 35ns，16ns | 1.2V，2V | 500mA，1A | ||
|
|
|
Infineon Technologies |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,004
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
385
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 44PLCC
|
Tube | - | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.5V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,478
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.5V | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,478
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 1CH 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.5V | 250mA，500mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,647
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV 10-WDFN
|
- | - | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 100V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HV SO8
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HV SO8
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
