- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Input Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- High Side Voltage - Max (Bootstrap)：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 946
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
396
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
987
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE HV 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
269
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
245
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,967
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
1,219
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-SOIC
|
Tube | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
337
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET/IGBT DVR HV HS 8-DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
1,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3PHASE 28SOIC
|
Tube | - | 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Diodes Incorporated |
3,648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRIDGE SO-8
|
Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 250V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
