- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 122
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,500
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3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | 250mA，500mA | ||
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Infineon Technologies |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR DSO28
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Tape & Reel (TR) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
1,600
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR DSO28
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Cut Tape (CT) | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
1,600
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
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- | 13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
|
DRIVER IC
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Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
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Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
4,000
|
3 jours |
-
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MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
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Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
6,404
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
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Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
6,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
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- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
4,000
|
3 jours |
-
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MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
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Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
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Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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|
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Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
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- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns，4.5ns | - | 4A，8A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | 8 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A | ||
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|
|
Infineon Technologies |
2,696
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
Cut Tape (CT) | 8 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A | ||
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|
|
Infineon Technologies |
2,696
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
- | 8 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
DRIVER IC
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A |
