Voltage - Supply:
Driven Configuration:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 15
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Input Type Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
2EDL05I06PFXUMA1
Infineon Technologies
10,000
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Tape & Reel (TR) 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06PFXUMA1
Infineon Technologies
10,174
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Cut Tape (CT) 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06PFXUMA1
Infineon Technologies
10,174
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
- 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDN8523FXTMA1
Infineon Technologies
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8523FXTMA1
Infineon Technologies
4,909
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN7523FXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523FXTMA1
Infineon Technologies
1,803
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN7523FXTMA1
Infineon Technologies
1,803
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns - 5A,5A
2EDN8524FXTMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 8DSO
Tape & Reel (TR) 4.5 V ~ 20 V Non-Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8524FXTMA1
Infineon Technologies
709
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
Cut Tape (CT) 4.5 V ~ 20 V Non-Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDN8524FXTMA1
Infineon Technologies
709
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 8DSO
- 4.5 V ~ 20 V Non-Inverting Low-Side N-Channel MOSFET - 5.3ns,4.5ns 1.2V,1.9V 5A,5A
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Tape & Reel (TR) 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
Cut Tape (CT) 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA
2EDL05I06BFXUMA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DRVR HALF-BRIDGE 8DSO
- 10 V ~ 20 V Non-Inverting Half-Bridge IGBT 600V 48ns,24ns 1.1V,1.7V 500mA,500mA